MARC details
| 000 -LEADER |
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| fixed length control field |
02018nam a2200253 a 4500 |
| 001 - CONTROL NUMBER |
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| control field |
vtls000040427 |
| 003 - CONTROL NUMBER IDENTIFIER |
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| control field |
KUKTEM |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
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| control field |
20251114204420.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
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| fixed length control field |
090716t2009 my a f m 000 0 eng|d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
THE0006918(Local) |
| 039 #9 - LEVEL OF BIBLIOGRAPHIC CONTROL AND CODING DETAIL [OBSOLETE] |
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| Level of rules in bibliographic description |
201906131049 |
| Level of effort used to assign nonsubject heading access points |
aida |
| Level of effort used to assign subject headings |
201107132244 |
| Level of effort used to assign classification |
VLOAD |
| Level of effort used to assign subject headings |
200911091845 |
| Level of effort used to assign classification |
kam |
| Level of effort used to assign subject headings |
200908141648 |
| Level of effort used to assign classification |
VLOAD |
| -- |
200907161104 |
| -- |
ida84 |
| 040 ## - CATALOGING SOURCE |
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| Original cataloging agency |
UMP |
| 090 ## - LOCALLY ASSIGNED LC-TYPE CALL NUMBER (OCLC); LOCAL CALL NUMBER (RLIN) |
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| Classification number (OCLC) (R) ; Classification number, CALL (RLIN) (NR) |
TK7871.96.B55 B35 2009 rs Bc. |
| 100 0# - MAIN ENTRY--PERSONAL NAME |
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| Personal name |
Bakhtiar Ahmad |
| 245 10 - TITLE STATEMENT |
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| Title |
Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT) / |
| Statement of responsibility, etc. |
Bakhtiar Ahmad |
| 246 3# - VARYING FORM OF TITLE |
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| Title proper/short title |
Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT) |
| Medium |
[electronic resource] |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. |
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| Place of publication, distribution, etc. |
Kuantan, Pahang : |
| Name of publisher, distributor, etc. |
UMP, |
| Date of publication, distribution, etc. |
2009 |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
74 p. : |
| Other physical details |
ill. (some col.) ; |
| Dimensions |
30 cm. + |
| Accompanying material |
1 computer disc |
| 502 ## - DISSERTATION NOTE |
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| Dissertation note |
Project paper (Bachelor of Electrical Engineering (Power systems)) -- Universiti Malaysia Pahang - 2009 |
| 520 3# - SUMMARY, ETC. |
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| Summary, etc. |
Test circuit of Insulated-gate Bipolar Transistor (IGBT-type IRGPC50F); standard ultra fast speed IGBT will be operated when gate voltage, Vg is applied to the Gate-terminal. IR2109 (MOSFET/IGBT Driver) will amplify the pulse signal from function generator due to DC voltage supply input amplitude. Output of IR2109 connected to IGBT gate in the test circuit and the circuit operates. In the test circuit, IGBT will turn on ad off due to the input PWM signal from the driver circuit. The event of the switching on and off of the IGBT observe and the data note down. The factors affecting the switching mode discuss. Power dissipation and losses in the circuit calculated due to the test. The result is then compared to IGBT-type IRG4IBC20UDPBF; IGBT with ultra fast soft recovery diode. Analysis and conclusion then been made to compare the pros and cons between the 2 tested IGBT due on term of selectivity. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
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| Topical term or geographic name entry element |
Insulated gate bipolar transistors |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
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| Topical term or geographic name entry element |
Bipolar transistors |