Theoretical study of transport properties of nanoelectronics for sensor application / (Record no. 7908)

MARC details
000 -LEADER
fixed length control field 04242ntm a2200373 i 4500
001 - CONTROL NUMBER
control field vtls000105295
003 - CONTROL NUMBER IDENTIFIER
control field KUKTEM
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20251117113407.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 180925t20182018my da f am 000 0 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number THE0005185(Local)
039 #9 - LEVEL OF BIBLIOGRAPHIC CONTROL AND CODING DETAIL [OBSOLETE]
Level of rules in bibliographic description 201905141435
Level of effort used to assign nonsubject heading access points hanafiah
Level of effort used to assign subject headings 201809251522
Level of effort used to assign classification saini
-- 201809251514
-- saini
040 ## - CATALOGING SOURCE
Original cataloging agency UMP
Language of cataloging eng
Transcribing agency UMP
Description conventions rda
090 ## - LOCALLY ASSIGNED LC-TYPE CALL NUMBER (OCLC); LOCAL CALL NUMBER (RLIN)
Classification number (OCLC) (R) ; Classification number, CALL (RLIN) (NR) FKEE .I34 2018 r Thesis
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Ijeomah, Geoffrey Ugochukwu,
Relator term author.
245 10 - TITLE STATEMENT
Title Theoretical study of transport properties of nanoelectronics for sensor application /
Statement of responsibility, etc. Ijeomah Geoffrey Ugochukwu
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Kuantan, Pahang :
Name of producer, publisher, distributor, manufacturer UMP,
Date of production, publication, distribution, manufacture, or copyright notice 2018
264 #4 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Date of production, publication, distribution, manufacture, or copyright notice © 2018
300 ## - PHYSICAL DESCRIPTION
Extent xiv, 170 pages :
Other physical details illustrations (some color), charts ;
Dimensions 30 cm. +
Accompanying material 1 CD ROM
336 ## - CONTENT TYPE
Content type term text
Source rdacontent
336 ## - CONTENT TYPE
Content type term text
Source rdacontent
337 ## - MEDIA TYPE
Media type term unmediated
Source rdamedia
337 ## - MEDIA TYPE
Media type term computer
Source rdamedia
338 ## - CARRIER TYPE
Carrier type term volume
Source rdacarrier
338 ## - CARRIER TYPE
Carrier type term computer disc
Source rdacarrier
347 ## - DIGITAL FILE CHARACTERISTICS
File type text file
Encoding format PDF
Source rda
500 ## - GENERAL NOTE
General note Faculty of Electrical and Electronics Engineering
502 ## - DISSERTATION NOTE
Dissertation note Thesis (Doctor of Philosophy of Engineering) -- Universiti Malaysia Pahang – 2018
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc. note Includes bibliographical references
520 3# - SUMMARY, ETC.
Summary, etc. Experimental prediction of transport properties of semiconductor devices faces a challenge these days due to continuous device scaling. As nanoelectronics are scaled to nanometre scale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate non-equilibrium Green function (NEGF) is hampered by the fact that it requires prohibitive amounts of memory and computation time. This work employs the Boltzmann Transport Equation (BTE) to investigate the transport properties of nanoelectronics, aiming to understand their sensing mechanism. Previous works on solving the BTE have employed either an approximate method or a stochastic method, both of which do not possess the requisite properties for practical device applications. Therefore, this work describes the direct theoretical solution of BTE for nanoelectronics that can be utilized for practical applications. This is achieved by employing powerful theoretical models to discretise the BTE both in energy and momentum without making any approximations on the transport integral or distribution function. This approach is not only fast but also has low memory requirements because it does not require direct storage of matrix elements. The complete spectrum of transport in nanoelectronics extending from Ohmic to high electric field through ballistic transmission is examined to delineate plethora of participating mean free paths (mfps). The transport for arbitrary values of electric field is based on BTE applied to experimental data on nanoelectronics extending from low to high field. In the limit of low field, the mobility expressions are obtained in terms of mfp that is distinctly shorter than the length of the sample. The results indicate that nanoelectronics predominantly operate in quasi-ballistic regime, where carrier transport becomes near ballistic across the channel near the source. The ohmic resistance was found to be quantized with a value of 6.453kΩ consistent with experimental observations with ballistic transmission almost unity as channel length shrinks below the scattering-limited mfp. The emission of a quantum was found to lower the saturation velocity that is independent of scattering and hence ballistic. Transition to ballistic regime was found to occur when channel length is reduced below the ballistic mfp that is shown to be extended version of long-channel mfp modified by injection from the contacts, yet the mobility degrades. This mobility degradation is shown to be the cause of resistance quantum in the low-channel-length limit. These findings have overwhelming implications in nanoelectronics sensor application.
610 20 - SUBJECT ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element Faculty of Electrical and Electronics Engineering
General subdivision Dissertations
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Universities and colleges
General subdivision Disertations
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Theses
Holdings
Withdrawn status Lost status Source of classification or shelving scheme Damaged status Not for loan Home library Current library Date acquired Total checkouts Full call number Barcode Date last seen Copy number Price effective from Koha item type
  Not lost Library of Congress Classification   Not for loan UMPLIB PEKAN UMPLIB PEKAN 04/09/2019   FKEE .I34 2018 r Thesis 0000125068 04/09/2019 1 04/09/2019 Thesis
  Not lost Library of Congress Classification   Final Processing UMPLIB PEKAN UMPLIB PEKAN 04/09/2019   CD 11622 | FKEE .I34 2018 r Thesis 0000125069 04/09/2019 1 04/09/2019 Thesis

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