MARC details
| 000 -LEADER |
| fixed length control field |
04242ntm a2200373 i 4500 |
| 001 - CONTROL NUMBER |
| control field |
vtls000105295 |
| 003 - CONTROL NUMBER IDENTIFIER |
| control field |
KUKTEM |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
| control field |
20251117113407.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
| fixed length control field |
180925t20182018my da f am 000 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
| International Standard Book Number |
THE0005185(Local) |
| 039 #9 - LEVEL OF BIBLIOGRAPHIC CONTROL AND CODING DETAIL [OBSOLETE] |
| Level of rules in bibliographic description |
201905141435 |
| Level of effort used to assign nonsubject heading access points |
hanafiah |
| Level of effort used to assign subject headings |
201809251522 |
| Level of effort used to assign classification |
saini |
| -- |
201809251514 |
| -- |
saini |
| 040 ## - CATALOGING SOURCE |
| Original cataloging agency |
UMP |
| Language of cataloging |
eng |
| Transcribing agency |
UMP |
| Description conventions |
rda |
| 090 ## - LOCALLY ASSIGNED LC-TYPE CALL NUMBER (OCLC); LOCAL CALL NUMBER (RLIN) |
| Classification number (OCLC) (R) ; Classification number, CALL (RLIN) (NR) |
FKEE .I34 2018 r Thesis |
| 100 1# - MAIN ENTRY--PERSONAL NAME |
| Personal name |
Ijeomah, Geoffrey Ugochukwu, |
| Relator term |
author. |
| 245 10 - TITLE STATEMENT |
| Title |
Theoretical study of transport properties of nanoelectronics for sensor application / |
| Statement of responsibility, etc. |
Ijeomah Geoffrey Ugochukwu |
| 264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE |
| Place of production, publication, distribution, manufacture |
Kuantan, Pahang : |
| Name of producer, publisher, distributor, manufacturer |
UMP, |
| Date of production, publication, distribution, manufacture, or copyright notice |
2018 |
| 264 #4 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE |
| Date of production, publication, distribution, manufacture, or copyright notice |
© 2018 |
| 300 ## - PHYSICAL DESCRIPTION |
| Extent |
xiv, 170 pages : |
| Other physical details |
illustrations (some color), charts ; |
| Dimensions |
30 cm. + |
| Accompanying material |
1 CD ROM |
| 336 ## - CONTENT TYPE |
| Content type term |
text |
| Source |
rdacontent |
| 336 ## - CONTENT TYPE |
| Content type term |
text |
| Source |
rdacontent |
| 337 ## - MEDIA TYPE |
| Media type term |
unmediated |
| Source |
rdamedia |
| 337 ## - MEDIA TYPE |
| Media type term |
computer |
| Source |
rdamedia |
| 338 ## - CARRIER TYPE |
| Carrier type term |
volume |
| Source |
rdacarrier |
| 338 ## - CARRIER TYPE |
| Carrier type term |
computer disc |
| Source |
rdacarrier |
| 347 ## - DIGITAL FILE CHARACTERISTICS |
| File type |
text file |
| Encoding format |
PDF |
| Source |
rda |
| 500 ## - GENERAL NOTE |
| General note |
Faculty of Electrical and Electronics Engineering |
| 502 ## - DISSERTATION NOTE |
| Dissertation note |
Thesis (Doctor of Philosophy of Engineering) -- Universiti Malaysia Pahang – 2018 |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE |
| Bibliography, etc. note |
Includes bibliographical references |
| 520 3# - SUMMARY, ETC. |
| Summary, etc. |
Experimental prediction of transport properties of semiconductor devices faces a challenge these days due to continuous device scaling. As nanoelectronics are scaled to nanometre scale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate non-equilibrium Green function (NEGF) is hampered by the fact that it requires prohibitive amounts of memory and computation time. This work employs the Boltzmann Transport Equation (BTE) to investigate the transport properties of nanoelectronics, aiming to understand their sensing mechanism. Previous works on solving the BTE have employed either an approximate method or a stochastic method, both of which do not possess the requisite properties for practical device applications. Therefore, this work describes the direct theoretical solution of BTE for nanoelectronics that can be utilized for practical applications. This is achieved by employing powerful theoretical models to discretise the BTE both in energy and momentum without making any approximations on the transport integral or distribution function. This approach is not only fast but also has low memory requirements because it does not require direct storage of matrix elements. The complete spectrum of transport in nanoelectronics extending from Ohmic to high electric field through ballistic transmission is examined to delineate plethora of participating mean free paths (mfps). The transport for arbitrary values of electric field is based on BTE applied to experimental data on nanoelectronics extending from low to high field. In the limit of low field, the mobility expressions are obtained in terms of mfp that is distinctly shorter than the length of the sample. The results indicate that nanoelectronics predominantly operate in quasi-ballistic regime, where carrier transport becomes near ballistic across the channel near the source. The ohmic resistance was found to be quantized with a value of 6.453kΩ consistent with experimental observations with ballistic transmission almost unity as channel length shrinks below the scattering-limited mfp. The emission of a quantum was found to lower the saturation velocity that is independent of scattering and hence ballistic. Transition to ballistic regime was found to occur when channel length is reduced below the ballistic mfp that is shown to be extended version of long-channel mfp modified by injection from the contacts, yet the mobility degrades. This mobility degradation is shown to be the cause of resistance quantum in the low-channel-length limit. These findings have overwhelming implications in nanoelectronics sensor application. |
| 610 20 - SUBJECT ADDED ENTRY--CORPORATE NAME |
| Corporate name or jurisdiction name as entry element |
Faculty of Electrical and Electronics Engineering |
| General subdivision |
Dissertations |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
| Topical term or geographic name entry element |
Universities and colleges |
| General subdivision |
Disertations |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
| Topical term or geographic name entry element |
Theses |