MARC details
| 000 -LEADER |
| fixed length control field |
02244nam a2200253 a 4500 |
| 001 - CONTROL NUMBER |
| control field |
vtls000092714 |
| 003 - CONTROL NUMBER IDENTIFIER |
| control field |
KUKTEM |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
| control field |
20251125103001.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
| fixed length control field |
151203t2014 flua f 001 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
| International Standard Book Number |
9781466583818 (hbk.) |
| 039 #9 - LEVEL OF BIBLIOGRAPHIC CONTROL AND CODING DETAIL [OBSOLETE] |
| Level of rules in bibliographic description |
201601221136 |
| Level of effort used to assign nonsubject heading access points |
aida |
| -- |
201512031218 |
| -- |
nadia |
| 040 ## - CATALOGING SOURCE |
| Original cataloging agency |
UMP |
| 090 ## - LOCALLY ASSIGNED LC-TYPE CALL NUMBER (OCLC); LOCAL CALL NUMBER (RLIN) |
| Classification number (OCLC) (R) ; Classification number, CALL (RLIN) (NR) |
TK7871.85 .I58 2014 |
| 245 00 - TITLE STATEMENT |
| Title |
Integrated power devices and TCAD simulation / |
| Statement of responsibility, etc. |
Yue Fu ... [et. al] |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. |
| Place of publication, distribution, etc. |
Boca Raton, FL : |
| Name of publisher, distributor, etc. |
CRC Press, |
| Date of publication, distribution, etc. |
2014 |
| 300 ## - PHYSICAL DESCRIPTION |
| Extent |
xvii, 338 p. : |
| Other physical details |
ill. (some col.) ; |
| Dimensions |
26 cm. |
| 490 0# - SERIES STATEMENT |
| Series statement |
Devices, circuits, and systems |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE |
| Bibliography, etc. note |
Includes bibliographical references and index |
| 520 ## - SUMMARY, ETC. |
| Summary, etc. |
"From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs).Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems. "-- |
| Assigning source |
Provided by publisher |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
| Topical term or geographic name entry element |
Power semiconductors |
| General subdivision |
Computer-aided design |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
| Topical term or geographic name entry element |
Three-dimensional imaging |
| 700 1# - ADDED ENTRY--PERSONAL NAME |
| Personal name |
Fu, Yue |