Integrated power devices and TCAD simulation / (Record no. 81291)

MARC details
000 -LEADER
fixed length control field 02244nam a2200253 a 4500
001 - CONTROL NUMBER
control field vtls000092714
003 - CONTROL NUMBER IDENTIFIER
control field KUKTEM
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20251125103001.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 151203t2014 flua f 001 0 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781466583818 (hbk.)
039 #9 - LEVEL OF BIBLIOGRAPHIC CONTROL AND CODING DETAIL [OBSOLETE]
Level of rules in bibliographic description 201601221136
Level of effort used to assign nonsubject heading access points aida
-- 201512031218
-- nadia
040 ## - CATALOGING SOURCE
Original cataloging agency UMP
090 ## - LOCALLY ASSIGNED LC-TYPE CALL NUMBER (OCLC); LOCAL CALL NUMBER (RLIN)
Classification number (OCLC) (R) ; Classification number, CALL (RLIN) (NR) TK7871.85 .I58 2014
245 00 - TITLE STATEMENT
Title Integrated power devices and TCAD simulation /
Statement of responsibility, etc. Yue Fu ... [et. al]
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Place of publication, distribution, etc. Boca Raton, FL :
Name of publisher, distributor, etc. CRC Press,
Date of publication, distribution, etc. 2014
300 ## - PHYSICAL DESCRIPTION
Extent xvii, 338 p. :
Other physical details ill. (some col.) ;
Dimensions 26 cm.
490 0# - SERIES STATEMENT
Series statement Devices, circuits, and systems
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc. note Includes bibliographical references and index
520 ## - SUMMARY, ETC.
Summary, etc. "From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs).Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems. "--
Assigning source Provided by publisher
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Power semiconductors
General subdivision Computer-aided design
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Three-dimensional imaging
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Fu, Yue
Holdings
Withdrawn status Lost status Damaged status Not for loan Home library Current library Date acquired Cost, normal purchase price Total checkouts Full call number Barcode Date last seen Copy number Cost, replacement price Price effective from Koha item type
  Not lost     UMPLIB PEKAN UMPLIB PEKAN 04/09/2019 751.90   TK7871.85 .I58 2014 0000106616 04/09/2019 1 751.90 04/09/2019 Open Shelf

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