MARC details
| 000 -LEADER |
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| fixed length control field |
02406nam a2200253 a 4500 |
| 001 - CONTROL NUMBER |
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| control field |
vtls000085750 |
| 003 - CONTROL NUMBER IDENTIFIER |
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| control field |
KUKTEM |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
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| control field |
20251125103027.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
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| fixed length control field |
150416t2011 ci a f b 000 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
9789533079684 |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| International Standard Book Number |
9533079681 |
| 039 #9 - LEVEL OF BIBLIOGRAPHIC CONTROL AND CODING DETAIL [OBSOLETE] |
|---|
| Level of rules in bibliographic description |
201509041027 |
| Level of effort used to assign nonsubject heading access points |
asma |
| Level of effort used to assign subject headings |
201509041026 |
| Level of effort used to assign classification |
asma |
| -- |
201504161322 |
| -- |
ezzatul |
| 040 ## - CATALOGING SOURCE |
|---|
| Original cataloging agency |
UMP |
| 090 ## - LOCALLY ASSIGNED LC-TYPE CALL NUMBER (OCLC); LOCAL CALL NUMBER (RLIN) |
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| Classification number (OCLC) (R) ; Classification number, CALL (RLIN) (NR) |
TK7871.15.S56 S55 2011 |
| 245 00 - TITLE STATEMENT |
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| Title |
Silicon carbide : |
| Remainder of title |
materials, processing and applications in electronic devices / |
| Statement of responsibility, etc. |
edited by Moumita Mukherjee |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. |
|---|
| Place of publication, distribution, etc. |
Croatia : |
| Name of publisher, distributor, etc. |
INTECH, |
| Date of publication, distribution, etc. |
c2011 |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
x, 546 p. : |
| Other physical details |
ill. ; |
| Dimensions |
26 cm. |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE |
|---|
| Bibliography, etc. note |
Includes bibliographical references |
| 520 ## - SUMMARY, ETC. |
|---|
| Summary, etc. |
Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the "materials" aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Silicon carbide |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Silicon carbide |
| General subdivision |
Electric properties |
| 700 1# - ADDED ENTRY--PERSONAL NAME |
|---|
| Personal name |
Mukherjee, Moumita |