3D modelling of substrate integrated waveguide (SIW) sensor for characterization of dielectric material / (Record no. 99977)

MARC details
000 -LEADER
fixed length control field 03634ntm a2200361 i 4500
003 - CONTROL NUMBER IDENTIFIER
control field MY-KuUP
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20251125110808.0
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS
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007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
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fixed length control field 231003t20222022my a|||fr|||| 000 0 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number THE0009715 (Local)
Qualifying information Hardback
040 ## - CATALOGING SOURCE
Original cataloging agency UMP
Language of cataloging eng
Transcribing agency UMP
Description conventions rda
090 ## - LOCALLY ASSIGNED LC-TYPE CALL NUMBER (OCLC); LOCAL CALL NUMBER (RLIN)
Classification number (OCLC) (R) ; Classification number, CALL (RLIN) (NR) FTKEE .A99 2022 r Bc.
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Nurazyyati Binti Inas,
Relator term author.
245 10 - TITLE STATEMENT
Title 3D modelling of substrate integrated waveguide (SIW) sensor for characterization of dielectric material /
Statement of responsibility, etc. Nurazyyati Binti Inas
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Kuantan, Pahang :
Name of producer, publisher, distributor, manufacturer UMP,
Date of production, publication, distribution, manufacture, or copyright notice 2022
264 #4 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Date of production, publication, distribution, manufacture, or copyright notice ©2022
300 ## - PHYSICAL DESCRIPTION
Extent xi, 64 pages :
Other physical details illustration ;
Dimensions 30 cm +
Accompanying material 1 CD-ROM
336 ## - CONTENT TYPE
Source rdacontent
Content type term text
336 ## - CONTENT TYPE
Source rdacontent
Content type term text
337 ## - MEDIA TYPE
Source rdamedia
Media type term unmediated
337 ## - MEDIA TYPE
Source rdamedia
Media type term computer
338 ## - CARRIER TYPE
Source rdacarrier
Carrier type term volume
338 ## - CARRIER TYPE
Source rdacarrier
Carrier type term computer disc
347 ## - DIGITAL FILE CHARACTERISTICS
Source rda
File type text file
Encoding format PDF
500 ## - GENERAL NOTE
General note Faculty of Electrical & Electronics Engineering
502 ## - DISSERTATION NOTE
Dissertation note Project Paper (Bachelor of Electrical Engineering (Hons.) (Electrical)) -- Universiti Malaysia Pahang – 2022
520 3# - SUMMARY, ETC.
Summary, etc. Dielectrics materials are a type of thin-film electronic material that is used in microelectronics. Active devices, such as transistors and their electrical isolation, such as capacitors, are used in a wide range of applications. High permittivity dielectric materials are utilized to improve the performance of semiconductor devices. Material development has begun with the discovery of thermoplastic resins, polyamides etc. These lead to the advancement of material characterization techniques such as using a variety of ways including planar resonators and substrate integrated waveguide (SIW).Various methods have been used for material characterization. However, these methods have issues that are specific to their uses. For instance, techniques that require vacuum cannot be used for analysing liquid or volatile chemicals. This limitation means that a given technique may have a limited range of applications. In this thesis, a new model design Substrate Integrated Waveguide (SIW) sensor for characterization of dielectric is presented. In order to enhance the accuracy of this sensor in extracting dielectric characteristics of materials, the performance parameter of this sensor is analysed and evaluated to assure performance using CST software. Concerning the modelling of the sensor, the steps started with validation of modelling technique from previous reported design research. After the technique of modelling is verified, the analysis for geometrical and dimensional changes such as the centre-to-centre distance ‘a’, the diameter of vias ‘d’ and the period between the vias ‘p’, are observed to meet the requirement design of this sensor. These analysis results are led to the modelling of own design, where resonant at 5.02GHz which covered in G-band range. The scattering parameters of this sensor are below -10dB in G-band which representing the good performance characteristics of this sensor. The simulation and measured scattering parameter have a good performance at 5.02GHz and 5.6GHz respectively which both frequencies covered in G-band range. Also, radiation patterns are analysed in order to validate the performance of the sensor. For the conclusion, the SIW sensor is designed on G-band operating at the frequency of 5.02GHz and a good radiation pattern with sidelobes of -2.7dB.
610 20 - SUBJECT ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element Faculty of Electrical and Electronics Engineering
General subdivision Dissertations
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Universities and colleges
General subdivision Dissertations
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Theses
General subdivision Dissertations
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme Library of Congress Classification
Koha item type Final Year Report
Holdings
Withdrawn status Lost status Source of classification or shelving scheme Damaged status Not for loan Collection Home library Current library Date acquired Total checkouts Full call number Barcode Date last seen Copy number Price effective from Koha item type
  Not lost Library of Congress Classification   Not for loan Non-fiction UMPLIB PEKAN UMPLIB PEKAN 03/10/2023   FTKEE .A99 2022 r Bc. T000002691 03/10/2023 1 03/10/2023 Final Year Report
  Not lost Library of Congress Classification     Non-fiction UMPLIB PEKAN UMPLIB PEKAN 03/10/2023   CD13443 T000002692 03/10/2023 1 03/10/2023 Final Year Report

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