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Design and develop current limiter for mosfet during overvoltage operation / Nur Haezah Mamat

By:

Nur Haezah Mamat

Material type: Text

TextPublication details: Kuantan, Pahang : UMP, 2012Description: xiv, 60 p. : ill. (some col.) ; 30 cm. + 1 CD-ROMISBN:

THE0006920(Local)

Subject(s):

Metal oxide semiconductor field-effect transistors

Dissertation note: Project paper (Bachelor of Electrical Engineering (Hons.) (Power Systems)) -- Universiti Malaysia Pahang - 2012 Abstract: Gate drive circuit is important for the purpose of controlling signal to the gate of power switch. Currently, most gate drive circuit is designed without current control; as such the overload, short circuit or overvoltage will cause permanent damage to the power switch. Protecting the power switch from being damage from the overload, short circuit and overvoltage must be considered seriously. In this project, the new design of gate drive circuit with current limiter to controls the gate voltage signal to the MOSFET and limits the current flow through the Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) during overvoltage. It will use the current limiter circuit to control voltage supplied to the gate of power switch and thus limit the amount of current flow to the MOSFET during overvoltage operation. Hence the gate drive circuit with current limiter is very important to protect the power switch from over current.

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Holdings ( 2 )
Title notes ( 3 )

Holdings
Item type	Current library	Call number	Copy number	Status	Date due	Barcode
Final Year Report	UMPLIB PEKAN	TK7871.99.M44 H34 2012 rs Bc. (Browse shelf(Opens below))	1	Not for loan		0000071427
Final Year Report	UMPLIB PEKAN	CD 6785 \| TK7871.99.M44 H34 2012 rs Bc. (Browse shelf(Opens below))	1	Not for loan		0000071428

Project paper (Bachelor of Electrical Engineering (Hons.) (Power Systems)) -- Universiti Malaysia Pahang - 2012

Bibliography : p. 46

Gate drive circuit is important for the purpose of controlling signal to the gate of power switch. Currently, most gate drive circuit is designed without current control; as such the overload, short circuit or overvoltage will cause permanent damage to the power switch. Protecting the power switch from being damage from the overload, short circuit and overvoltage must be considered seriously. In this project, the new design of gate drive circuit with current limiter to controls the gate voltage signal to the MOSFET and limits the current flow through the Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) during overvoltage. It will use the current limiter circuit to control voltage supplied to the gate of power switch and thus limit the amount of current flow to the MOSFET during overvoltage operation. Hence the gate drive circuit with current limiter is very important to protect the power switch from over current.