02018nam a2200253 a 4500 vtls000040427 KUKTEM 20251114204420.0 090716t2009 my a f m 000 0 eng|d THE0006918(Local) 201906131049 aida 201107132244 VLOAD 200911091845 kam 200908141648 VLOAD 200907161104 ida84 UMP TK7871.96.B55 B35 2009 rs Bc. Bakhtiar Ahmad Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT) / Bakhtiar Ahmad Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT) [electronic resource] Kuantan, Pahang : UMP, 2009 74 p. : ill. (some col.) ; 30 cm. + 1 computer disc Project paper (Bachelor of Electrical Engineering (Power systems)) -- Universiti Malaysia Pahang - 2009 Test circuit of Insulated-gate Bipolar Transistor (IGBT-type IRGPC50F); standard ultra fast speed IGBT will be operated when gate voltage, Vg is applied to the Gate-terminal. IR2109 (MOSFET/IGBT Driver) will amplify the pulse signal from function generator due to DC voltage supply input amplitude. Output of IR2109 connected to IGBT gate in the test circuit and the circuit operates. In the test circuit, IGBT will turn on ad off due to the input PWM signal from the driver circuit. The event of the switching on and off of the IGBT observe and the data note down. The factors affecting the switching mode discuss. Power dissipation and losses in the circuit calculated due to the test. The result is then compared to IGBT-type IRG4IBC20UDPBF; IGBT with ultra fast soft recovery diode. Analysis and conclusion then been made to compare the pros and cons between the 2 tested IGBT due on term of selectivity. Insulated gate bipolar transistors Bipolar transistors 0 0 0 1 20000 20000 2019-09-04 0 CD 3317 | TK7871.96.B55 B35 2009 rs Bc. 0000037886 2019-09-04 00:00:00 1 2019-09-04 PSM 0 0 0 1 20000 20000 2019-09-04 0 TK7871.96.B55 B35 2009 rs Bc. 0000037885 2019-09-04 00:00:00 1 2019-09-04 PSM VIRTUA40 1642 1648 VTLSSORT0080*0200*0400*0900*1000*2450*2460*2600*3000*5020*5200*6500*6501*9992