01879nam a2200241 a 4500 vtls000075555 KUKTEM 20251114204544.0 131017t2012 my a f m 000 0 eng d THE0006920(Local) 201906131051 aida 201310171644 Fida UMP TK7871.99.M44 H34 2012 rs Bc. Nur Haezah Mamat Design and develop current limiter for mosfet during overvoltage operation / Nur Haezah Mamat Kuantan, Pahang : UMP, 2012 xiv, 60 p. : ill. (some col.) ; 30 cm. + 1 CD-ROM Project paper (Bachelor of Electrical Engineering (Hons.) (Power Systems)) -- Universiti Malaysia Pahang - 2012 Bibliography : p. 46 Gate drive circuit is important for the purpose of controlling signal to the gate of power switch. Currently, most gate drive circuit is designed without current control; as such the overload, short circuit or overvoltage will cause permanent damage to the power switch. Protecting the power switch from being damage from the overload, short circuit and overvoltage must be considered seriously. In this project, the new design of gate drive circuit with current limiter to controls the gate voltage signal to the MOSFET and limits the current flow through the Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) during overvoltage. It will use the current limiter circuit to control voltage supplied to the gate of power switch and thus limit the amount of current flow to the MOSFET during overvoltage operation. Hence the gate drive circuit with current limiter is very important to protect the power switch from over current. Metal oxide semiconductor field-effect transistors 0 0 0 1 20000 20000 2019-09-04 0 TK7871.99.M44 H34 2012 rs Bc. 0000071427 2019-09-04 00:00:00 1 2019-09-04 PSM 0 0 0 1 20000 20000 2019-09-04 0 CD 6785 | TK7871.99.M44 H34 2012 rs Bc. 0000071428 2019-09-04 00:00:00 1 2019-09-04 PSM VIRTUA40 4042 4048 VTLSSORT0080*0200*0400*0900*1000*2450*2600*3000*5020*5040*5200*6500*9992