SiGe and Si strained-layer epitaxy for silicon heterostructure devices / 
edited by John D. Cressler. 
 - Boca Raton  :  CRC Press/Taylor & Francis,  2008 
 - 1 v. (various pagings) :  ill. ;  26 cm. 
<br/><br/> "The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005"--T.p. verso. 
<br/><br/>Includes bibliographical references and index 
<br/><br/><label>ISBN: </label>9781420066852 (alk. paper) 1420066854 (alk. paper) 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Bipolar transistors--Materials.<br/>Heterostructures.<br/>Silicon--Electric properties.<br/>Epitaxy