TY  - BOOK
AU  - Cressler,John D.
TI  - SiGe and Si strained-layer epitaxy for silicon heterostructure devices
SN  - 9781420066852 (alk. paper)
PY  - 2008///
CY  - Boca Raton
PB  - CRC Press/Taylor & Francis
KW  - Bipolar transistors
KW  - Materials
KW  - Heterostructures
KW  - Silicon
KW  - Electric properties
KW  - Epitaxy
N1  - "The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005"--T.p. verso; Includes bibliographical references and index
ER  -