01772nam a2200241 a 4500001001400000003000700014005001700021008004100038020001800079040000800097100002600105245008400131260004600215300003300261504005000294520096800344650002501312650002801337650004301365650004301408650005701451700002201508vtls000067479KUKTEM20251125093739.0121206t2012    flua   f      001 0 eng d  a9781439831526  aUMP1 aMcCluskey, Matthew D.10aDopants and defects in semiconductors /cMatthew D. McCluskey, Eugene E. Haller  aBoca Raton, FL :bTaylor & Francis,c2012  axx, 370 p. :bill. ;c26 cm.  aIncludes bibliographical references and index  a"Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts.The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy.By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors"-- œc Provided by publisher 0aSemiconductor doping 0aSemiconductorsxDefects 7aSCIENCE / Chemistry / General2bisacsh 7aSCIENCE / Solid State Physics2bisacsh 7aTECHNOLOGY & ENGINEERING / Material Science2bisacsh1 aHaller, Eugene E.