01280nam a2200253 a 4500001001400000003000700014005001700021008004100038020002500079040000800104111012200112245030800234246010000542260005100642300003300693490005200726504005000778650003200828650004100860650004300901700002200944700002000966830004000986vtls000071789KUKTEM20251125095410.0130613t2011    sz a   f      001 0 eng d  a9783037850510 (pbk.)  aUMP2 aInternational Symposium on Technology Evolution for Silicon Nano-Electronicsd(2010 :cTokyo Institute of Technology)10aTechnology evolution for silicon nano-electronics :bselected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan /cedited by Seiichi Miyazaki and Hitoshi Tabata3 aProceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics  aStafa-Zurich, Switzerland :bTrans Tech,c2011  axi, 234 p. :bill. ;c25 cm.1 aKey engineering materials,x1013-9826 ;vv. 470  aIncludes bibliographical references and index 0aNanoelectronicsvCongresses 0aNanostructured materialsvCongresses 0aMetal oxide semiconductorsvCongresses1 aMiyazaki, Seiichi1 aTabata, Hitoshi 0aKey engineering materials ;vv. 470