02244nam a2200253 a 4500 vtls000092714 KUKTEM 20251125103001.0 151203t2014 flua f 001 0 eng d 9781466583818 (hbk.) 201601221136 aida 201512031218 nadia UMP TK7871.85 .I58 2014 Integrated power devices and TCAD simulation / Yue Fu ... [et. al] Boca Raton, FL : CRC Press, 2014 xvii, 338 p. : ill. (some col.) ; 26 cm. Devices, circuits, and systems Includes bibliographical references and index "From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs).Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems. "-- Provided by publisher Power semiconductors Computer-aided design Three-dimensional imaging Fu, Yue 0 0 0 0 20000 20000 2019-09-04 751.90 0 TK7871.85 .I58 2014 0000106616 2019-09-04 00:00:00 1 751.90 2019-09-04 OPEN VIRTUA40 81291 81297 VTLSSORT0080*0200*0400*0900*2450*2600*3000*4900*5040*5200*6500*6501*7000*9992