01940nam a2200241 a 4500 vtls000037490 KUKTEM 20251114204357.0 090609t2008 my a f m 000 0 eng d THE0006921(Local) 201906131052 aida 201107132243 VLOAD 200908141626 VLOAD 200908141600 VLOAD 200906091548 kam UMP TK7871.99.M44 N87 2008 rs Bc. Nuripaizail Ahmad Microcontroller based variable gate voltage for MOSFET / Nuripaizail Bin Ahmad Microcontroller based variable gate voltage for MOSFET [electronic resource] Kuantan, Pahang : UMP, 2008 64 p. : ill. (some col.) ; 30 cm. + 1 computer disc Project paper (Bachelor of Electrical Engineering (Power system) -- Universiti Malaysia Pahang - 2008 Metal Oxide Semiconductor Field Effect Transistor, MOSFETs are important and expansive switching devices in many power electronic circuit applications. MOSFETs require adequate pulses at its gate terminal in order to work properly. The amount of current going through the source and drain terminals is controlled by the magnitude pulses supplied. Normally, the magnitude of gate pulses is fixed and set to a nearly maximum allowable current of MOSFET. The problem with fixed type gate pulses is whenever overload occurs; the MOSFETs may experience very high current and thus working beyond their safe operating area (SOA). This situation might destroy the MOSFET. This project is implement base on PIC16F84A to generate PWM. The IR2109 use provide variable magnitude of PWM pulses and then to drive the based gate of the MOSFET. IR2109 is selected because of its ability to withstand high voltage input. Metal oxide semiconductor field-effect transistors 0 0 0 1 20000 20000 2019-09-04 0 TK7871.99.M44 N87 2008 rs Bc. 0000037216 2019-09-04 00:00:00 1 2019-09-04 PSM 0 0 0 1 20000 20000 2019-09-04 0 CD 3172 | TK7871.99.M44 N87 2008 rs Bc. 0000037217 2019-09-04 00:00:00 1 2019-09-04 PSM VIRTUA40 961 967 VTLSSORT0080*0200*0400*0900*1000*2450*2460*2600*3000*5020*5200*6500*9992