000			02018nam a2200253 a 4500
001			vtls000040427
003			KUKTEM
005			20251114204420.0
008			090716t2009 my a f m 000 0 eng|d
020			_aTHE0006918(Local)
039		9	_a201906131049 _baida _c201107132244 _dVLOAD _c200911091845 _dkam _c200908141648 _dVLOAD _y200907161104 _zida84
040			_aUMP
090			_aTK7871.96.B55 B35 2009 rs Bc.
100	0		_aBakhtiar Ahmad
245	1	0	_aSwitching characteristic and analysis of insulated-gate bipolar transistor (IGBT) / _cBakhtiar Ahmad
246	3		_aSwitching characteristic and analysis of insulated-gate bipolar transistor (IGBT) _h[electronic resource]
260			_aKuantan, Pahang : _bUMP, _c2009
300			_a74 p. : _bill. (some col.) ; _c30 cm. + _e1 computer disc
502			_aProject paper (Bachelor of Electrical Engineering (Power systems)) -- Universiti Malaysia Pahang - 2009
520	3		_aTest circuit of Insulated-gate Bipolar Transistor (IGBT-type IRGPC50F); standard ultra fast speed IGBT will be operated when gate voltage, Vg is applied to the Gate-terminal. IR2109 (MOSFET/IGBT Driver) will amplify the pulse signal from function generator due to DC voltage supply input amplitude. Output of IR2109 connected to IGBT gate in the test circuit and the circuit operates. In the test circuit, IGBT will turn on ad off due to the input PWM signal from the driver circuit. The event of the switching on and off of the IGBT observe and the data note down. The factors affecting the switching mode discuss. Power dissipation and losses in the circuit calculated due to the test. The result is then compared to IGBT-type IRG4IBC20UDPBF; IGBT with ultra fast soft recovery diode. Analysis and conclusion then been made to compare the pros and cons between the 2 tested IGBT due on term of selectivity.
650		0	_aInsulated gate bipolar transistors
650		0	_aBipolar transistors
999			_aVIRTUA40 _c1642 _d1648
999			_aVTLSSORT0080*0200*0400*0900*1000*2450*2460*2600*3000*5020*5200*6500*6501*9992