000 01176nam a2200289 a 4500
001 vtls000021517
003 KUKTEM
005 20251117144410.0
008 070928s2006 nju f 001 0 eng|d
020 _a9812568352 (v.1)
020 _a9812703837 (v.2)
039 9 _a201107131933
_bVLOAD
_c200908141343
_dVLOAD
_c200908141315
_dVLOAD
_c200908131719
_dVLOAD
_y200709281203
_zfarina
040 _aUMP
090 _aTK7871.15.S56 S53 2006
245 0 0 _aSiC materials and devices /
_cedited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein
260 _aNew Jersey ;
_aLondon :
_bWorld Scientific,
_c2006-
300 _a2 v. :
_bill. ;
_c26 cm.
440 0 _aSelected topics in electronics and systems ;
_vv. 40, v. 43
504 _aIncludes bibliographical references and index
650 0 _aSilicon carbide
_xElectric properties
650 0 _aSemiconductors
700 1 _aShur, Michael
700 1 _aRumyantsev, Sergey L.
700 1 _aLevinshteâ„¢in, M. E.
_q(Mikhail Efimovich)
856 4 2 _uhttp://www.loc.gov/catdir/toc/fy0709/2007272569.html
999 _aVIRTUA40
_c35515
_d35521
999 _aVTLSSORT0080*0200*0201*0400*0900*2450*2600*3000*4400*5040*6500*6501*7000*7001*7002*8560*9991