| 000 | 01879nam a2200241 a 4500 | ||
|---|---|---|---|
| 001 | vtls000075555 | ||
| 003 | KUKTEM | ||
| 005 | 20251114204544.0 | ||
| 008 | 131017t2012 my a f m 000 0 eng d | ||
| 020 | _aTHE0006920(Local) | ||
| 039 | 9 |
_a201906131051 _baida _y201310171644 _zFida |
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| 040 | _aUMP | ||
| 090 | _aTK7871.99.M44 H34 2012 rs Bc. | ||
| 100 | 0 | _aNur Haezah Mamat | |
| 245 | 1 | 0 |
_aDesign and develop current limiter for mosfet during overvoltage operation / _cNur Haezah Mamat |
| 260 |
_aKuantan, Pahang : _bUMP, _c2012 |
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| 300 |
_axiv, 60 p. : _bill. (some col.) ; _c30 cm. + _e1 CD-ROM |
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| 502 | _aProject paper (Bachelor of Electrical Engineering (Hons.) (Power Systems)) -- Universiti Malaysia Pahang - 2012 | ||
| 504 | _aBibliography : p. 46 | ||
| 520 | 3 | _aGate drive circuit is important for the purpose of controlling signal to the gate of power switch. Currently, most gate drive circuit is designed without current control; as such the overload, short circuit or overvoltage will cause permanent damage to the power switch. Protecting the power switch from being damage from the overload, short circuit and overvoltage must be considered seriously. In this project, the new design of gate drive circuit with current limiter to controls the gate voltage signal to the MOSFET and limits the current flow through the Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) during overvoltage. It will use the current limiter circuit to control voltage supplied to the gate of power switch and thus limit the amount of current flow to the MOSFET during overvoltage operation. Hence the gate drive circuit with current limiter is very important to protect the power switch from over current. | |
| 650 | 0 | _aMetal oxide semiconductor field-effect transistors | |
| 999 |
_aVIRTUA40 _c4042 _d4048 |
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| 999 | _aVTLSSORT0080*0200*0400*0900*1000*2450*2600*3000*5020*5040*5200*6500*9992 | ||