| 000 | 00900nam a2200253 a 4500 | ||
|---|---|---|---|
| 001 | vtls000032009 | ||
| 003 | KUKTEM | ||
| 005 | 20251117145229.0 | ||
| 008 | 081105t2003 maua f b 001 0 eng d | ||
| 020 | _a9781580533614 | ||
| 020 | _a1580533612 | ||
| 039 | 9 |
_a201107132052 _bVLOAD _c201012061437 _dida _c200908141528 _dVLOAD _c200908141458 _dVLOAD _y200811051225 _zsaini |
|
| 040 | _aUMP | ||
| 090 | _aTK7871.96.B55 C74 2003 | ||
| 100 | 1 | _aCressler, John D. | |
| 245 | 1 | 0 |
_aSilicon-germanium heterojunction bipolar transistors / _cJohn D. Cressler, Guofu Niu |
| 260 |
_aBoston : _bArtech House, _cc2003 |
||
| 300 |
_axviii, 570 p. : _bill. ; _c24 cm. |
||
| 504 | _aIncludes bibliographical references and index | ||
| 650 | 0 | _aBipolar transistors | |
| 650 | 0 | _aGermanium | |
| 700 | 1 | _aNiu, Guofu | |
| 999 |
_aVIRTUA40 _c42003 _d42009 |
||
| 999 | _aVTLSSORT0080*0200*0201*0400*0900*1000*2450*2600*3000*5040*6500*6501*7000*9991 | ||