000			01330nam a2200289 a 4500
001			vtls000030026
003			KUKTEM
005			20251117145327.0
008			080707t2008 nyua f 001 0 eng d
020			_a9781420066852 (alk. paper)
020			_a1420066854 (alk. paper)
039		9	_a201107132117 _bVLOAD _c200908141602 _dVLOAD _c200908141535 _dVLOAD _c200908132055 _dVLOAD _y200807071302 _zsaini
040			_aUMP
090			_aTK7871.96.B55 S54 2008
245	0	0	_aSiGe and Si strained-layer epitaxy for silicon heterostructure devices / _cedited by John D. Cressler.
260			_aBoca Raton : _bCRC Press/Taylor & Francis, _c2008
300			_a1 v. (various pagings) : _bill. ; _c26 cm.
500			_a"The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005"--T.p. verso.
504			_aIncludes bibliographical references and index
650		0	_aBipolar transistors _xMaterials.
650		0	_aHeterostructures.
650		0	_aSilicon _xElectric properties.
650		0	_aEpitaxy
700	1		_aCressler, John D.
730	0		_aSilicon heterostructure handbook
999			_aVIRTUA40 _c43980 _d43986
999			_aVTLSSORT0080*0200*0201*0400*0900*2450*2600*3000*5000*5040*6500*6501*6502*6503*7000*7300*9991