| 000 | 00981nam a2200241 a 4500 | ||
|---|---|---|---|
| 001 | vtls000029846 | ||
| 003 | KUKTEM | ||
| 005 | 20251117145329.0 | ||
| 008 | 080630s2008 flua b 001 0 eng | ||
| 020 | _a1420066870 (alk. paper) | ||
| 020 | _a9781420066876 (alk. paper) | ||
| 039 | 9 |
_a201107132119 _bVLOAD _c201012061442 _dida _c200908141604 _dVLOAD _c200908141536 _dVLOAD _y200806301628 _znorsaini |
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| 040 | _aUMP | ||
| 090 | _aTK7871.96.B55 F33 2008 | ||
| 245 | 0 | 0 |
_aFabrication of SiGe HBT BiCMOS technology / _cedited by John D. Cressler |
| 260 |
_aBoca Raton, FL : _bCRC Press, _cc2008 |
||
| 300 |
_a1 v. (various pagings) : _bill. ; _c27 cm. |
||
| 500 | _aIncludes bibliographical references and index | ||
| 650 | 0 |
_aBipolar transistors _xDesign and construction |
|
| 650 | 0 |
_aMetal oxide semiconductors, Complementary _xDesign and construction |
|
| 700 | 1 | _aCressler, John D. | |
| 999 |
_aVIRTUA40 _c44029 _d44035 |
||
| 999 | _aVTLSSORT0080*0200*0201*0400*0900*2450*2600*3000*5000*6500*6501*7000*9991 | ||