| 000 | 01151nam a2200277 a 4500 | ||
|---|---|---|---|
| 001 | vtls000030004 | ||
| 003 | KUKTEM | ||
| 005 | 20251117145618.0 | ||
| 008 | 080707t2008 flua f b 001 0 eng d | ||
| 020 | _a9781420066920 (alk. paper) | ||
| 020 | _a1420066927 (alk. paper) | ||
| 039 | 9 |
_a201107132249 _bVLOAD _c200909091024 _dfauzi _c200908141456 _dVLOAD _c200908141427 _dVLOAD _y200807071138 _zsaini |
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| 040 | _aUMP | ||
| 090 | _aTK7871.96.B55 M42 2008 | ||
| 245 | 0 | 0 |
_aMeasurement and modeling of silicon heterostructure devices / _cedited by John D. Cressler |
| 260 |
_aBoca Raton, FL : _bCRC Press, _cc2008 |
||
| 300 |
_a1 v. (various pagings) : _bill. ; _c27 cm. |
||
| 504 | _aIncludes bibliographical references and index | ||
| 650 | 0 |
_aBipolar transistors _xMathematical models |
|
| 650 | 0 | _aBipolar transistors | |
| 650 | 0 | _aHeterostructures | |
| 650 | 0 |
_aIntegrated circuits _xDesign and construction |
|
| 700 | 1 | _aCressler, John D. | |
| 856 | 4 | 1 |
_3Table of contents only _uhttp://www.loc.gov/catdir/toc/ecip0723/2007030737.html |
| 999 |
_aVIRTUA40 _c49854 _d49860 |
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| 999 | _aVTLSSORT0080*0200*0201*0400*0900*2450*2600*3000*5040*6500*6501*6502*6503*7000*8560*9991 | ||