| 000 | 00996nam a2200277 a 4500 | ||
|---|---|---|---|
| 001 | vtls000068952 | ||
| 003 | KUKTEM | ||
| 005 | 20251125093532.0 | ||
| 008 | 130312t2012 flua f 001 0 eng d | ||
| 020 | _a9781439807453 (hbk.) | ||
| 020 | _a1439807450 (hbk.) | ||
| 039 | 9 |
_a201311191051 _bnabilah _y201303121147 _zsri |
|
| 040 | _aUMP | ||
| 090 | _aTK7895.M4 L54 2012 | ||
| 100 | 1 | _aLi, Hai | |
| 245 | 1 | 0 |
_aNonvolatile memory design : _bmagnetic, resistive, and phase change / _cHai Li, Yiran Chen |
| 260 |
_aBoca Raton, FL : _bCRC Press, _cc2012 |
||
| 300 |
_axiv, 189 p. : _bill. ; _c25 cm. |
||
| 504 | _aIncludes bibliographical references and index | ||
| 650 | 0 | _aSemiconductor storage devices | |
| 650 | 0 | _aMagnetic memory (Computers) | |
| 650 | 0 | _aFlash memories (Computers) | |
| 650 | 0 |
_aChange of state (Physics) _xIndustrial applications |
|
| 700 | 1 | _aChen, Yiran | |
| 999 |
_aVIRTUA40 _c65586 _d65592 |
||
| 999 | _aVTLSSORT0080*0200*0201*0400*0900*1000*2450*2600*3000*5040*6500*6501*6502*6503*7000*9992 | ||