000			02014nam a2200289 a 4500
001			vtls000067479
003			KUKTEM
005			20251125093739.0
008			121206t2012 flua f 001 0 eng d
020			_a9781439831526
039		9	_a201305201038 _bsaini _y201212061209 _zsafura
040			_aUMP
090			_aTK7871.85 .C58 2012
100	1		_aMcCluskey, Matthew D.
245	1	0	_aDopants and defects in semiconductors / _cMatthew D. McCluskey, Eugene E. Haller
260			_aBoca Raton, FL : _bTaylor & Francis, _c2012
300			_axx, 370 p. : _bill. ; _c26 cm.
504			_aIncludes bibliographical references and index
520			_a"Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts.The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy.By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors"-- œc Provided by publisher
650		0	_aSemiconductor doping
650		0	_aSemiconductors _xDefects
650		7	_aSCIENCE / Chemistry / General _2bisacsh
650		7	_aSCIENCE / Solid State Physics _2bisacsh
650		7	_aTECHNOLOGY & ENGINEERING / Material Science _2bisacsh
700	1		_aHaller, Eugene E.
999			_aVIRTUA40 _c67779 _d67785
999			_aVTLSSORT0080*0200*0400*0900*1000*2450*2600*3000*5040*5200*6500*6501*6502*6503*6504*7000*9992