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008 171030s2017 my da f abm 000 0 eng d
020 _aTHE0000218(Local)
039 9 _a201905141438
_bnazirah
_c201712261117
_dnazri
_y201710301438
_zsaini
040 _aUMP
090 _aFIST .Y58 2017 r Bc.
100 1 _aYit, Pei Shian
245 1 0 _aAmbient energy harvesting by ZnO thin film /
_cYit Pei Shian
260 _aKuantan, Pahang :
_bUMP,
_c2017
300 _axiv, 63 p. :
_bill. (some col.), charts ;
_c30 cm. +
_e1 CD-ROM
500 _aFaculty of Industrial Sciences and Technology
502 _aProject Paper (Bachelor of Applied Science (Honor) Material Technology) -- Universiti Malaysia Pahang – 2017
504 _aBibliography : p. [58]-61
520 3 _aThis thesis deals with ambient energy harvesting using zinc oxide thin film. The objectives of this thesis are to prove the ZnO film as a piezoelectric material can produce electric when vibration is applied and determine its optimal voltage. This thesis describes the sol gel spin coating technique to fabricate zinc oxide thin film. Zinc acetate dehydrate, absolute ethanol and diethanolamine were used to act as sol gel precursor. Sol gel was coated on glass slide which wrapped by aluminum foil. The thin film was formed after preheating and annealing. The thin film was characterized by X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), Photoluminescence Spectroscopy (PL) and Ultraviolet-visible Spectroscopy (UV-Vis) as well as analyzed using vibration technique. From XRD results, the films were preferentially diffracted at around 65° which corresponding to (1 1 2) diffraction phase. From FESEM results, it was observed that when the spin speed was increased at same annealing temperature, the thickness was also decreased. When the annealing temperature was increased at same spin speed, both grain size and thickness were increased. From the PL results, there was only film with spin speed of 2000 rpm and annealing temperature of 300°C had slightly left wavelength which was 380 nm. Annealing temperature would affect only the intensity of PL wavelength. From the results of UV-Vis, it was observed that when the spin speed was increased at same annealing temperature, the band gap was decreased. When the annealing temperature was increased at same spin speed, the band gap was decreased. Piezoelectric test had proven the ZnO film could produce electricity. The maximum voltage (20.7 mV) was produced by the ZnO film with spin speed of 2000 rpm and annealing temperature of 300°C.
610 2 0 _aFaculty of Industrial Sciences and Technology
_xDissertations
650 0 _aUniversities and Colleges
_xDissertations
650 0 _aTheses
856 4 0 _uhttp://ecollib.ump.edu.my/id/eprint/28020
_zAccess in library only
999 _aVIRTUA40
_c7379
_d7385
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