000 04242ntm a2200373 i 4500
001 vtls000105295
003 KUKTEM
005 20251117113407.0
008 180925t20182018my da f am 000 0 eng d
020 _aTHE0005185(Local)
039 9 _a201905141435
_bhanafiah
_c201809251522
_dsaini
_y201809251514
_zsaini
040 _aUMP
_beng
_cUMP
_erda
090 _aFKEE .I34 2018 r Thesis
100 1 _aIjeomah, Geoffrey Ugochukwu,
_eauthor.
245 1 0 _aTheoretical study of transport properties of nanoelectronics for sensor application /
_cIjeomah Geoffrey Ugochukwu
264 1 _aKuantan, Pahang :
_bUMP,
_c2018
264 4 _c© 2018
300 _axiv, 170 pages :
_billustrations (some color), charts ;
_c30 cm. +
_e1 CD ROM
336 _atext
_2rdacontent
336 _atext
_2rdacontent
337 _aunmediated
_2rdamedia
337 _acomputer
_2rdamedia
338 _avolume
_2rdacarrier
338 _acomputer disc
_2rdacarrier
347 _atext file
_bPDF
_2rda
500 _aFaculty of Electrical and Electronics Engineering
502 _aThesis (Doctor of Philosophy of Engineering) -- Universiti Malaysia Pahang – 2018
504 _aIncludes bibliographical references
520 3 _aExperimental prediction of transport properties of semiconductor devices faces a challenge these days due to continuous device scaling. As nanoelectronics are scaled to nanometre scale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate non-equilibrium Green function (NEGF) is hampered by the fact that it requires prohibitive amounts of memory and computation time. This work employs the Boltzmann Transport Equation (BTE) to investigate the transport properties of nanoelectronics, aiming to understand their sensing mechanism. Previous works on solving the BTE have employed either an approximate method or a stochastic method, both of which do not possess the requisite properties for practical device applications. Therefore, this work describes the direct theoretical solution of BTE for nanoelectronics that can be utilized for practical applications. This is achieved by employing powerful theoretical models to discretise the BTE both in energy and momentum without making any approximations on the transport integral or distribution function. This approach is not only fast but also has low memory requirements because it does not require direct storage of matrix elements. The complete spectrum of transport in nanoelectronics extending from Ohmic to high electric field through ballistic transmission is examined to delineate plethora of participating mean free paths (mfps). The transport for arbitrary values of electric field is based on BTE applied to experimental data on nanoelectronics extending from low to high field. In the limit of low field, the mobility expressions are obtained in terms of mfp that is distinctly shorter than the length of the sample. The results indicate that nanoelectronics predominantly operate in quasi-ballistic regime, where carrier transport becomes near ballistic across the channel near the source. The ohmic resistance was found to be quantized with a value of 6.453kΩ consistent with experimental observations with ballistic transmission almost unity as channel length shrinks below the scattering-limited mfp. The emission of a quantum was found to lower the saturation velocity that is independent of scattering and hence ballistic. Transition to ballistic regime was found to occur when channel length is reduced below the ballistic mfp that is shown to be extended version of long-channel mfp modified by injection from the contacts, yet the mobility degrades. This mobility degradation is shown to be the cause of resistance quantum in the low-channel-length limit. These findings have overwhelming implications in nanoelectronics sensor application.
610 2 0 _aFaculty of Electrical and Electronics Engineering
_xDissertations
650 0 _aUniversities and colleges
_xDisertations
650 0 _aTheses
999 _aVIRTUA40
_c7908
_d7914
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