| 000 | 02406nam a2200253 a 4500 | ||
|---|---|---|---|
| 001 | vtls000085750 | ||
| 003 | KUKTEM | ||
| 005 | 20251125103027.0 | ||
| 008 | 150416t2011 ci a f b 000 0 eng d | ||
| 020 | _a9789533079684 | ||
| 020 | _a9533079681 | ||
| 039 | 9 |
_a201509041027 _basma _c201509041026 _dasma _y201504161322 _zezzatul |
|
| 040 | _aUMP | ||
| 090 | _aTK7871.15.S56 S55 2011 | ||
| 245 | 0 | 0 |
_aSilicon carbide : _bmaterials, processing and applications in electronic devices / _cedited by Moumita Mukherjee |
| 260 |
_aCroatia : _bINTECH, _cc2011 |
||
| 300 |
_ax, 546 p. : _bill. ; _c26 cm. |
||
| 504 | _aIncludes bibliographical references | ||
| 520 | _aSilicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the "materials" aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression | ||
| 650 | 0 | _aSilicon carbide | |
| 650 | 0 |
_aSilicon carbide _xElectric properties |
|
| 700 | 1 | _aMukherjee, Moumita | |
| 999 |
_aVIRTUA40 _c81695 _d81701 |
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| 999 | _aVTLSSORT0080*0200*0201*0400*0900*2450*2600*3000*5040*5200*6500*6501*7000*9992 | ||