| 000 | 01940nam a2200241 a 4500 | ||
|---|---|---|---|
| 001 | vtls000037490 | ||
| 003 | KUKTEM | ||
| 005 | 20251114204357.0 | ||
| 008 | 090609t2008 my a f m 000 0 eng d | ||
| 020 | _aTHE0006921(Local) | ||
| 039 | 9 |
_a201906131052 _baida _c201107132243 _dVLOAD _c200908141626 _dVLOAD _c200908141600 _dVLOAD _y200906091548 _zkam |
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| 040 | _aUMP | ||
| 090 | _aTK7871.99.M44 N87 2008 rs Bc. | ||
| 100 | 0 | _aNuripaizail Ahmad | |
| 245 | 1 | 0 |
_aMicrocontroller based variable gate voltage for MOSFET / _cNuripaizail Bin Ahmad |
| 246 | 3 |
_aMicrocontroller based variable gate voltage for MOSFET _h[electronic resource] |
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| 260 |
_aKuantan, Pahang : _bUMP, _c2008 |
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| 300 |
_a64 p. : _bill. (some col.) ; _c30 cm. + _e1 computer disc |
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| 502 | _aProject paper (Bachelor of Electrical Engineering (Power system) -- Universiti Malaysia Pahang - 2008 | ||
| 520 | 3 | _aMetal Oxide Semiconductor Field Effect Transistor, MOSFETs are important and expansive switching devices in many power electronic circuit applications. MOSFETs require adequate pulses at its gate terminal in order to work properly. The amount of current going through the source and drain terminals is controlled by the magnitude pulses supplied. Normally, the magnitude of gate pulses is fixed and set to a nearly maximum allowable current of MOSFET. The problem with fixed type gate pulses is whenever overload occurs; the MOSFETs may experience very high current and thus working beyond their safe operating area (SOA). This situation might destroy the MOSFET. This project is implement base on PIC16F84A to generate PWM. The IR2109 use provide variable magnitude of PWM pulses and then to drive the based gate of the MOSFET. IR2109 is selected because of its ability to withstand high voltage input. | |
| 650 | 0 | _aMetal oxide semiconductor field-effect transistors | |
| 999 |
_aVIRTUA40 _c961 _d967 |
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| 999 | _aVTLSSORT0080*0200*0400*0900*1000*2450*2460*2600*3000*5020*5200*6500*9992 | ||