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020			_aTHE0009715 (Local) _qHardback
040			_aUMP _beng _cUMP _erda
090			_aFTKEE .A99 2022 r Bc.
100	1		_aNurazyyati Binti Inas, _eauthor.
245	1	0	_a3D modelling of substrate integrated waveguide (SIW) sensor for characterization of dielectric material / _cNurazyyati Binti Inas
264		1	_aKuantan, Pahang : _bUMP, _c2022
264		4	_c©2022
300			_axi, 64 pages : _billustration ; _c30 cm + _e1 CD-ROM
336			_2rdacontent _atext
336			_2rdacontent _atext
337			_2rdamedia _aunmediated
337			_2rdamedia _acomputer
338			_2rdacarrier _avolume
338			_2rdacarrier _acomputer disc
347			_2rda _atext file _bPDF
500			_aFaculty of Electrical & Electronics Engineering
502			_aProject Paper (Bachelor of Electrical Engineering (Hons.) (Electrical)) -- Universiti Malaysia Pahang – 2022
520	3		_aDielectrics materials are a type of thin-film electronic material that is used in microelectronics. Active devices, such as transistors and their electrical isolation, such as capacitors, are used in a wide range of applications. High permittivity dielectric materials are utilized to improve the performance of semiconductor devices. Material development has begun with the discovery of thermoplastic resins, polyamides etc. These lead to the advancement of material characterization techniques such as using a variety of ways including planar resonators and substrate integrated waveguide (SIW).Various methods have been used for material characterization. However, these methods have issues that are specific to their uses. For instance, techniques that require vacuum cannot be used for analysing liquid or volatile chemicals. This limitation means that a given technique may have a limited range of applications. In this thesis, a new model design Substrate Integrated Waveguide (SIW) sensor for characterization of dielectric is presented. In order to enhance the accuracy of this sensor in extracting dielectric characteristics of materials, the performance parameter of this sensor is analysed and evaluated to assure performance using CST software. Concerning the modelling of the sensor, the steps started with validation of modelling technique from previous reported design research. After the technique of modelling is verified, the analysis for geometrical and dimensional changes such as the centre-to-centre distance ‘a’, the diameter of vias ‘d’ and the period between the vias ‘p’, are observed to meet the requirement design of this sensor. These analysis results are led to the modelling of own design, where resonant at 5.02GHz which covered in G-band range. The scattering parameters of this sensor are below -10dB in G-band which representing the good performance characteristics of this sensor. The simulation and measured scattering parameter have a good performance at 5.02GHz and 5.6GHz respectively which both frequencies covered in G-band range. Also, radiation patterns are analysed in order to validate the performance of the sensor. For the conclusion, the SIW sensor is designed on G-band operating at the frequency of 5.02GHz and a good radiation pattern with sidelobes of -2.7dB.
610	2	0	_aFaculty of Electrical and Electronics Engineering _xDissertations
650		0	_aUniversities and colleges _xDissertations
650		0	_aTheses _xDissertations
942			_2lcc _cPSM