MARC details
| 000 -LEADER |
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| fixed length control field |
03965ntm a2200373 i 4500 |
| 003 - CONTROL NUMBER IDENTIFIER |
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| control field |
MY-KuUP |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
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| control field |
20251125105736.0 |
| 006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS |
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t||||fr|||| 000 0 |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
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ta |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
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| fixed length control field |
201015t2 2 my a|||fram|| 000 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
THE0008911(Local) |
| Qualifying information |
hardback |
| 040 ## - CATALOGING SOURCE |
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| Original cataloging agency |
UMP |
| Language of cataloging |
eng |
| Transcribing agency |
UMP |
| Description conventions |
rda |
| 090 ## - LOCALLY ASSIGNED LC-TYPE CALL NUMBER (OCLC); LOCAL CALL NUMBER (RLIN) |
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| Classification number (OCLC) (R) ; Classification number, CALL (RLIN) (NR) |
FTKA .Y68 2019 r Thesis |
| 100 1# - MAIN ENTRY--PERSONAL NAME |
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| Personal name |
Yousif, Yousif Atalla, |
| Relator term |
author. |
| 245 10 - TITLE STATEMENT |
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| Title |
Optimal channel dimensions and temperature characteristics of SI-FinFET transistor / |
| Statement of responsibility, etc. |
Yousif Atalla Yousif |
| 264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE |
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| Place of production, publication, distribution, manufacture |
Kuantan, Pahang : |
| Name of producer, publisher, distributor, manufacturer |
UMP, |
| Date of production, publication, distribution, manufacture, or copyright notice |
2019 |
| 264 #4 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE |
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| Date of production, publication, distribution, manufacture, or copyright notice |
© 2019 |
| 300 ## - PHYSICAL DESCRIPTION |
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| Extent |
xii, 97 pages : |
| Other physical details |
illustrations (some color) ; |
| Dimensions |
30 cm. + |
| Accompanying material |
1 CD-ROM |
| 336 ## - CONTENT TYPE |
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| Content type term |
text |
| Source |
rdacontent |
| 336 ## - CONTENT TYPE |
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| Content type term |
text |
| Source |
rdacontent |
| 337 ## - MEDIA TYPE |
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| Media type term |
unmediated |
| Source |
rdamedia |
| 337 ## - MEDIA TYPE |
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| Media type term |
computer |
| Source |
rdamedia |
| 338 ## - CARRIER TYPE |
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| Carrier type term |
volume |
| Source |
rdacarrier |
| 338 ## - CARRIER TYPE |
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| Carrier type term |
computer disc |
| Source |
rdacarrier |
| 347 ## - DIGITAL FILE CHARACTERISTICS |
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| File type |
text file |
| Encoding format |
PDF |
| Source |
rda |
| 500 ## - GENERAL NOTE |
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| General note |
Faculty of Engineering Technology |
| 502 ## - DISSERTATION NOTE |
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| Dissertation note |
Thesis (Master of Science) -- Universiti Malaysia Pahang – 2019 |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE |
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| Bibliography, etc. note |
Includes bibliographical references |
| 520 3# - SUMMARY, ETC. |
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| Summary, etc. |
As metal oxide semiconductor field effect transistor (MOSFET) technology approaches its downscaling limits, many novel structures of FET have been explored extensively. One of the relatively new types of FET is FinFET. The performance of electronic devices, which may correspond to a wide array of recent applications, likely depend on the nano-dimensional characteristics of such devices. The chip generation of these powerful electronic devices with ultra-small transistors may increase in reliability when new findings from future research are consolidated. However, nano-dimensional FET designs and structures are still considered as novel technologies, thereby necessitating further study and improvement. Further innovations are needed despite the limitations in MOSFET science. Transistor-based temperature sensors are designed based on the temperature characteristics of current-voltage curves of FinFET transistors. This study aims to design channel dimensions of Si-FinFET for best performance based on electrical and temperature characteristics. The study investigates the temperature characteristics (sensitivity and stability) of Si-FinFET based on optimal channel dimensions, such as length (L), width (W)), oxide thickness (TOX) and operating voltage (VDD). This study focuses on simulating and analysing the effects of the operating temperature of Si-FinFET on its electrical characteristics as limitation factors, namely, threshold voltage (VT), subthreshold swing (SS), and drain-induced barrier lowering (DIBL). A multi-gate field effect transistor (MuGFET) simulation tool is used to investigate the temperature and electrical characteristics of FinFET. Current-voltage characteristics with different temperatures (T = 250, 275, 300, 325, 350, 375 and 400 K) and gate length (Lg = 25, 45, 65, 85 and 105 nm), gate width (Wg = 5, 10, 20, 40 and 80 nm) and oxide thickness (TOX = 1, 2, 3, 4 and 5 nm) are initially simulated. Then, the metal oxide semiconductor diode mode connection to measure FinFET temperature sensitivity is considered. Thus, the perfect channel length for the FinFET under the conditions considered in this thesis is 65 nm to obtain acceptable temperature sensitivity at the operating voltage range of 0–5 V. Furthermore, temperature sensitivity of the FinFET increased with channel width at the range of 5–80 nm. The best increments for the current (ΔI) in relation to temperature can be achieved by increasing TOX to 5 nm, beyond which the values become stable regardless of the thickness. We can infer that the optimal Wg values are 5, 10 and 20 nm, which are consistent and may be considered as perfect values. The best TOX in this study is 1 nm. |
| 610 20 - SUBJECT ADDED ENTRY--CORPORATE NAME |
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| Corporate name or jurisdiction name as entry element |
Faculty of Engineering Technology |
| General subdivision |
Dissertations |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
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| Topical term or geographic name entry element |
Universities and colleges |
| General subdivision |
Dissertations |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Theses |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) |
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| Source of classification or shelving scheme |
Library of Congress Classification |
| Koha item type |
Thesis |