MARC details
| 000 -LEADER |
|---|
| fixed length control field |
01940nam a2200241 a 4500 |
| 001 - CONTROL NUMBER |
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| control field |
vtls000037490 |
| 003 - CONTROL NUMBER IDENTIFIER |
|---|
| control field |
KUKTEM |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
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| control field |
20251114204357.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
|---|
| fixed length control field |
090609t2008 my a f m 000 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| International Standard Book Number |
THE0006921(Local) |
| 039 #9 - LEVEL OF BIBLIOGRAPHIC CONTROL AND CODING DETAIL [OBSOLETE] |
|---|
| Level of rules in bibliographic description |
201906131052 |
| Level of effort used to assign nonsubject heading access points |
aida |
| Level of effort used to assign subject headings |
201107132243 |
| Level of effort used to assign classification |
VLOAD |
| Level of effort used to assign subject headings |
200908141626 |
| Level of effort used to assign classification |
VLOAD |
| Level of effort used to assign subject headings |
200908141600 |
| Level of effort used to assign classification |
VLOAD |
| -- |
200906091548 |
| -- |
kam |
| 040 ## - CATALOGING SOURCE |
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| Original cataloging agency |
UMP |
| 090 ## - LOCALLY ASSIGNED LC-TYPE CALL NUMBER (OCLC); LOCAL CALL NUMBER (RLIN) |
|---|
| Classification number (OCLC) (R) ; Classification number, CALL (RLIN) (NR) |
TK7871.99.M44 N87 2008 rs Bc. |
| 100 0# - MAIN ENTRY--PERSONAL NAME |
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| Personal name |
Nuripaizail Ahmad |
| 245 10 - TITLE STATEMENT |
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| Title |
Microcontroller based variable gate voltage for MOSFET / |
| Statement of responsibility, etc. |
Nuripaizail Bin Ahmad |
| 246 3# - VARYING FORM OF TITLE |
|---|
| Title proper/short title |
Microcontroller based variable gate voltage for MOSFET |
| Medium |
[electronic resource] |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. |
|---|
| Place of publication, distribution, etc. |
Kuantan, Pahang : |
| Name of publisher, distributor, etc. |
UMP, |
| Date of publication, distribution, etc. |
2008 |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
64 p. : |
| Other physical details |
ill. (some col.) ; |
| Dimensions |
30 cm. + |
| Accompanying material |
1 computer disc |
| 502 ## - DISSERTATION NOTE |
|---|
| Dissertation note |
Project paper (Bachelor of Electrical Engineering (Power system) -- Universiti Malaysia Pahang - 2008 |
| 520 3# - SUMMARY, ETC. |
|---|
| Summary, etc. |
Metal Oxide Semiconductor Field Effect Transistor, MOSFETs are important and expansive switching devices in many power electronic circuit applications. MOSFETs require adequate pulses at its gate terminal in order to work properly. The amount of current going through the source and drain terminals is controlled by the magnitude pulses supplied. Normally, the magnitude of gate pulses is fixed and set to a nearly maximum allowable current of MOSFET. The problem with fixed type gate pulses is whenever overload occurs; the MOSFETs may experience very high current and thus working beyond their safe operating area (SOA). This situation might destroy the MOSFET. This project is implement base on PIC16F84A to generate PWM. The IR2109 use provide variable magnitude of PWM pulses and then to drive the based gate of the MOSFET. IR2109 is selected because of its ability to withstand high voltage input. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Metal oxide semiconductor field-effect transistors |