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Microcontroller based variable gate voltage for MOSFET / Nuripaizail Bin Ahmad

By:

Nuripaizail Ahmad

Material type: Text

TextPublication details: Kuantan, Pahang : UMP, 2008Description: 64 p. : ill. (some col.) ; 30 cm. + 1 computer discISBN:

THE0006921(Local)

Other title:

Microcontroller based variable gate voltage for MOSFET [electronic resource]

Subject(s):

Metal oxide semiconductor field-effect transistors

Dissertation note: Project paper (Bachelor of Electrical Engineering (Power system) -- Universiti Malaysia Pahang - 2008 Abstract: Metal Oxide Semiconductor Field Effect Transistor, MOSFETs are important and expansive switching devices in many power electronic circuit applications. MOSFETs require adequate pulses at its gate terminal in order to work properly. The amount of current going through the source and drain terminals is controlled by the magnitude pulses supplied. Normally, the magnitude of gate pulses is fixed and set to a nearly maximum allowable current of MOSFET. The problem with fixed type gate pulses is whenever overload occurs; the MOSFETs may experience very high current and thus working beyond their safe operating area (SOA). This situation might destroy the MOSFET. This project is implement base on PIC16F84A to generate PWM. The IR2109 use provide variable magnitude of PWM pulses and then to drive the based gate of the MOSFET. IR2109 is selected because of its ability to withstand high voltage input.

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Holdings ( 2 )
Title notes ( 2 )

Holdings
Item type	Current library	Call number	Copy number	Status	Date due	Barcode
Final Year Report	UMPLIB PEKAN	TK7871.99.M44 N87 2008 rs Bc. (Browse shelf(Opens below))	1	Not for loan		0000037216
Final Year Report	UMPLIB PEKAN	CD 3172 \| TK7871.99.M44 N87 2008 rs Bc. (Browse shelf(Opens below))	1	Not for loan		0000037217

Project paper (Bachelor of Electrical Engineering (Power system) -- Universiti Malaysia Pahang - 2008

Metal Oxide Semiconductor Field Effect Transistor, MOSFETs are important and expansive switching devices in many power electronic circuit applications. MOSFETs require adequate pulses at its gate terminal in order to work properly. The amount of current going through the source and drain terminals is controlled by the magnitude pulses supplied. Normally, the magnitude of gate pulses is fixed and set to a nearly maximum allowable current of MOSFET. The problem with fixed type gate pulses is whenever overload occurs; the MOSFETs may experience very high current and thus working beyond their safe operating area (SOA). This situation might destroy the MOSFET. This project is implement base on PIC16F84A to generate PWM. The IR2109 use provide variable magnitude of PWM pulses and then to drive the based gate of the MOSFET. IR2109 is selected because of its ability to withstand high voltage input.