SiGe and Si strained-layer epitaxy for silicon heterostructure devices /
SiGe and Si strained-layer epitaxy for silicon heterostructure devices /
edited by John D. Cressler.
- Boca Raton : CRC Press/Taylor & Francis, 2008
- 1 v. (various pagings) : ill. ; 26 cm.
"The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005"--T.p. verso.
Includes bibliographical references and index
9781420066852 (alk. paper) 1420066854 (alk. paper)
Bipolar transistors--Materials.
Heterostructures.
Silicon--Electric properties.
Epitaxy
"The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005"--T.p. verso.
Includes bibliographical references and index
9781420066852 (alk. paper) 1420066854 (alk. paper)
Bipolar transistors--Materials.
Heterostructures.
Silicon--Electric properties.
Epitaxy