MARC details
| 000 -LEADER |
|---|
| fixed length control field |
01330nam a2200289 a 4500 |
| 001 - CONTROL NUMBER |
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| control field |
vtls000030026 |
| 003 - CONTROL NUMBER IDENTIFIER |
|---|
| control field |
KUKTEM |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
|---|
| control field |
20251117145327.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
|---|
| fixed length control field |
080707t2008 nyua f 001 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| International Standard Book Number |
9781420066852 (alk. paper) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| International Standard Book Number |
1420066854 (alk. paper) |
| 039 #9 - LEVEL OF BIBLIOGRAPHIC CONTROL AND CODING DETAIL [OBSOLETE] |
|---|
| Level of rules in bibliographic description |
201107132117 |
| Level of effort used to assign nonsubject heading access points |
VLOAD |
| Level of effort used to assign subject headings |
200908141602 |
| Level of effort used to assign classification |
VLOAD |
| Level of effort used to assign subject headings |
200908141535 |
| Level of effort used to assign classification |
VLOAD |
| Level of effort used to assign subject headings |
200908132055 |
| Level of effort used to assign classification |
VLOAD |
| -- |
200807071302 |
| -- |
saini |
| 040 ## - CATALOGING SOURCE |
|---|
| Original cataloging agency |
UMP |
| 090 ## - LOCALLY ASSIGNED LC-TYPE CALL NUMBER (OCLC); LOCAL CALL NUMBER (RLIN) |
|---|
| Classification number (OCLC) (R) ; Classification number, CALL (RLIN) (NR) |
TK7871.96.B55 S54 2008 |
| 245 00 - TITLE STATEMENT |
|---|
| Title |
SiGe and Si strained-layer epitaxy for silicon heterostructure devices / |
| Statement of responsibility, etc. |
edited by John D. Cressler. |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. |
|---|
| Place of publication, distribution, etc. |
Boca Raton : |
| Name of publisher, distributor, etc. |
CRC Press/Taylor & Francis, |
| Date of publication, distribution, etc. |
2008 |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
1 v. (various pagings) : |
| Other physical details |
ill. ; |
| Dimensions |
26 cm. |
| 500 ## - GENERAL NOTE |
|---|
| General note |
"The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005"--T.p. verso. |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE |
|---|
| Bibliography, etc. note |
Includes bibliographical references and index |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Bipolar transistors |
| General subdivision |
Materials. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Heterostructures. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Silicon |
| General subdivision |
Electric properties. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Epitaxy |
| 700 1# - ADDED ENTRY--PERSONAL NAME |
|---|
| Personal name |
Cressler, John D. |
| 730 0# - ADDED ENTRY--UNIFORM TITLE |
|---|
| Uniform title |
Silicon heterostructure handbook |