SiGe and Si strained-layer epitaxy for silicon heterostructure devices / edited by John D. Cressler.

Contributor(s):

Cressler, John D

Material type: Text

TextPublication details: Boca Raton : CRC Press/Taylor & Francis, 2008Description: 1 v. (various pagings) : ill. ; 26 cmISBN:

9781420066852 (alk. paper)
1420066854 (alk. paper)

Uniform titles:

Silicon heterostructure handbook

Subject(s):

Bipolar transistors -- Materials
Heterostructures
Silicon -- Electric properties
Epitaxy

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Holdings ( 1 )
Title notes ( 2 )

Holdings
Item type	Current library	Call number	Copy number	Status	Date due	Barcode
Open Shelf	UMPLIB PEKAN	TK7871.96.B55 S54 2008 (Browse shelf(Opens below))	1	Available		0000035765

"The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005"--T.p. verso.

Includes bibliographical references and index

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